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Ryan Walker

Ryan Walker 2017-01-24T10:11:36+0000

Ion Implantation is an alternative to a deposition diffusion and is used to produce a shallow surface region of dopant atoms deposited into a silicon wafer. This technology has made significant roads into diffusion technology in several areas.

In this process a beam of impurity ions is accelerated to kinetic energies in the range of several tens of kV and is directed to the surface of the silicon. As the impurity atoms enter the crystal, they give up their energy to the lattice in collisions and finally come to rest at some average penetration depth, called the projected range expressed in micro meters.

For more information please visit http://n2bio.com/our-technologies/ion-implantation/

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